FDC6301N
Manufacturer:
On Semiconductor
Mfr.Part #:
FDC6301N
Datasheet:
Description:
MOSFETs SSOT-6 SMD/SMT N-Channel number of channels:2 900 mW 25 V Continuous Drain Current (ID):220 mA 490 pC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 25 V |
| Length | 3 mm |
| Width | 1.7 mm |
| Termination | SMD/SMT |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 6 |
| Resistance | 4 Ω |
| Height | 1 mm |
| Packaging | Reel |
| Lead Free | Lead Free |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Weight | 0.036 g |
| Contact Plating | Tin |
| Number of Elements | 2 |
| Current Rating | 220 mA |
| Lifecycle Status | Production (Last Updated: 7 months ago) |
| Max Power Dissipation | 900 mW |
| Power Dissipation | 900 mW |
| Threshold Voltage | 850 mV |
| Number of Channels | 2 |
| Input capacitance | 9.5 pF |
| Continuous Drain Current (ID) | 220 mA |
| Rds On Max | 4 Ω |
| Drain to Source Voltage (Vdss) | 25 V |
| Turn-On Delay Time | 5 ns |
| Turn-Off Delay Time | 4 ns |
| Element Configuration | Dual |
| Fall Time | 4.5 ns |
| Rise Time | 4.5 ns |
| Dual Supply Voltage | 25 V |
| Gate Charge | 490 pC |
| Drain to Source Resistance | 3.8 Ω |
| Nominal Vgs | 850 mV |
| Gate to Source Voltage (Vgs) | -500 mV, 8 V |
| Drain to Source Breakdown Voltage (Vds) | 25 V |
| Schedule B | 8541210080 |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 7 months ago) |
| Gate to Source Threshold Voltage | 1.5 V |
| FET Type(Transistor Polarity) | N-Channel |
Stock: 6963
Distributors
pcbx
pcbxUnit Price$0.37531
Ext.Price$0.37531
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.37531 | $0.37531 |
| 10 | $0.22997 | $2.29970 |
| 50 | $0.18389 | $9.19450 |
| 100 | $0.14705 | $14.70500 |
| 500 | $0.11114 | $55.57000 |
| 1000 | $0.09746 | $97.46000 |
| 3000 | $0.06951 | $208.53000 |
| 5000 | $0.06627 | $331.35000 |
| 10000 | $0.06318 | $631.80000 |